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Resolving electronic inhomogeneity in CdZnTe bulk crystal via scanning microwave impedance microscopy
Author(s) -
Xu Yadong,
Gu Yaxu,
Jia Ningbo,
Yu Siyuan,
Han Xu,
Chen Yanfeng,
Jie Wanqi
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201770219
Subject(s) - materials science , microwave , tellurium , signal (programming language) , crystal (programming language) , optics , dielectric , electrical impedance , microscope , optoelectronics , physics , quantum mechanics , computer science , programming language , metallurgy
The front cover of this issue points to two main results which were achieved in the work by Yadong Xu et al. (article no. 1600474 ). First of all, the authors show the ability of near‐field scanning microwave impedance microscope (MIM) to map the local electrical properties in a rapid and nondestructive manner, which will be helpful for the characterization of micro‐nano structures or defects in bulk crystals. Secondly, well‐defined tellurium‐rich secondary phase particles (Te‐SP) embedded in CdZnTe crystals were observed for the first time according to the significant contrast of the MIM images, attributed to the dielectric and conductivity discrepancy between Te‐SP and the CdZnTe matrix. Typical images of Te inclusions embedded in a CdZnTe crystal are shown as the background. Furthermore, a schematic diagram depicting the scanning MIM configuration is presented. The diagram at the bottom relates the line cuts of MIM‐Im signal (output of the detected imaginary component of the effective tip‐sample impedance) and the respective height taken from the standard AFM signal.