Premium
Negative‐ U Properties of the Deep Level E3 in ZnO
Author(s) -
Pickenhain Rainer,
Schmidt Matthias,
von Wenckstern Holger,
Benndorf Gabriele,
Pöppl Andreas,
Böttcher Rolf,
Grundmann Marius
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700670
Subject(s) - photoluminescence , electron paramagnetic resonance , electron , atomic physics , ionization , photon energy , excitation , materials science , band gap , photon , chemistry , molecular physics , physics , optoelectronics , nuclear magnetic resonance , optics , ion , organic chemistry , quantum mechanics
The deep level E3 is a commonly observed defect in bulk crystals and thin films of ZnO independently of the method of growth. Its chemical origin is still not finally understood. In this paper, previous research on the E3 level is reviewed and recent experimental results acquired by optical deep level transient spectroscopic (DLTS) methods are presented for the temperature range from 4 to 350 K, for photon energies between 0.25 and 4 eV, and for emission rates ranging from 10 −3 to 10 4 s −1 . The capture cross section of the optical transition of E3‐trapped electrons into the conduction band is described. Additionally, a second optical transition occurs for photon energies higher than 1 eV, which accounts for the lowering of the E3 DLTS signal at low temperatures under illumination. Further, it is unambiguously shown that the E3 defect can bind up to two electrons and that it has the properties of a negative‐ U center. Photoluminescence measurements reveal that the E3 defect is directly connected to a radiative recombination channel at 2.09 eV. Further, electron paramagnetic resonance (EPR) measurements were performed with optical excitation in dependence on the temperature and photon energy. Interestingly, the temperature‐dependent EPR signal ofV O +is similar to that of the photo‐ionization cross‐section of the E3 defect. These experimental findings are discussed in comparison with published EPR results and results obtained by first‐principle calculations of native point defects in ZnO.