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Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates
Author(s) -
Jais Vytautas,
Jakštas Vytautas,
Kašalynas Irmantas,
Prystawko Pawel,
Kruszewski Piotr
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700498
Subject(s) - grating , materials science , heterojunction , plasmon , optoelectronics , phonon , semiconductor , wide bandgap semiconductor , polariton , band gap , optics , condensed matter physics , physics
Reflectivity of the plasmon–phonon modes in grating‐coupled AlGaN/GaN heterostructures grown either on GaN or on SiC substrates were studied across the Reststrahlen band of semiconductors. The reflection spectra are experimentally obtained and fitted with the numerical data modeled using a rigorous coupled wave analysis method. Analysis of the field plots revealed that the origin of the intense multipeak reflectance minima can be attributed to the strong phonon interaction with the grating plasmons, demonstrating new possibilities for the localization of phonon‐polariton modes within AlGaN/GaN layers. The results are important for the optical and electrical engineering of new sensors, emitters, and modulators employing wide bandgap semiconductor junctions coupled with the metal gratings of the specified design.