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Non‐Polar a ‐Plane AlN Growth on Nitrided r ‐Plane Sapphire by Ga–Al Liquid‐Phase Epitaxy
Author(s) -
Adachi Masayoshi,
Fukuyama Hiroyuki
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700478
Subject(s) - sapphire , epitaxy , materials science , nitriding , optoelectronics , plane (geometry) , phase (matter) , polar , metalorganic vapour phase epitaxy , nitride , crystallography , optics , layer (electronics) , laser , nanotechnology , chemistry , geometry , physics , mathematics , organic chemistry , astronomy
Growth of non‐polar AlN layers is important to realize high‐efficiency deep‐ultraviolet light‐emitting diodes. In this study, a ‐plane AlN layers are fabricated by a combination of thermal nitridation and Ga–Al liquid‐phase epitaxy (LPE). Thermal nitridation at 1603 and 1623 K provides a ‐plane AlN thin films with smooth surfaces on r ‐plane sapphire substrates. However, these AlN films contain a double domain structure. Nitridation of r ‐plane sapphire with an off‐cut angle can effectively eliminate the double domain structure. Moreover, a ‐plane AlN films are grown homoepitaxially on the nitrided r ‐plane sapphire substrates by Ga–Al LPE. Thus, a single‐domain non‐polar AlN film is successfully grown on nitrided r ‐plane sapphire with an off‐cut angle.