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Optical Absorption and Electroabsorption Related to Electronic and Single Dopant Transitions in Holey Elliptical GaAs Quantum Dots
Author(s) -
Vinasco Juan Alejandro,
Londoño Mauricio Alejandro,
Restrepo Ricardo León,
MoraRamos Miguel Eduardo,
Feddi El Mustapha,
Radu Adrian,
Kasapoglu Esin,
Morales Alvaro Luis,
Duque Carlos Alberto
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700470
Subject(s) - quantum dot , impurity , electron , absorption (acoustics) , adiabatic process , dopant , adiabatic theorem , condensed matter physics , effective mass (spring–mass system) , electric field , atomic physics , electro absorption modulator , materials science , physics , quantum well , molecular physics , optics , optoelectronics , quantum dot laser , doping , quantum mechanics , laser
The electron states in a holey elliptically shaped GaAs quantum dot are investigated within the effective mass scheme with the use of the adiabatic approximation and the finite element method. The effects of a donor impurity center and an applied electric field are particularly taken into account. Electron‐impurity energies are reported as functions of both the geometry of the quantum dot and the applied field intensity, whereas temperature effects are also included. The analysis of electron‐impurity intersubband transitions allows the investigation of the light absorption response of the system.