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Biexciton Emission From Single Quantum‐Confined Structures in N‐Polar (000‐1) InGaN/GaN Multiple Quantum Wells
Author(s) -
Takamiya Kengo,
Yagi Shuhei,
Yaguchi Hiroyuki,
Akiyama Hidefumi,
Shojiki Kanako,
Tanikawa Tomoyuki,
Katayama Ryuji
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700454
Subject(s) - photoluminescence , biexciton , quantum well , exciton , luminescence , materials science , sapphire , excitation , condensed matter physics , molecular physics , optoelectronics , physics , optics , laser , quantum mechanics
We report on the observation of biexciton luminescence from single quantum‐confined structures in N‐polar InGaN/GaN multiple quantum wells (MQWs) grown on c ‐plane sapphire by metalorganic vapor phase epitaxy. Sharp emission lines are observed at different positions of the sample by micro‐photoluminescence (μ‐PL) mapping. The density of sharp emission lines is ≈0.3 μm −2 , which is comparable with the inversion domain (ID) density found from transmission electron microscope observation, suggesting that the sharp emission lines originate from single quantum‐confined structures formed by the combination of quantum well and IDs in N‐polar InGaN/GaN MQWs. It is found from the excitation power dependence of the PL intensity of two adjacent sharp lines that the intensity of biexciton luminescence at the lower energy side shows a quadratic dependence on the excitation power while that of exciton luminescence at the higher energy side increased linearly with increasing excitation power. The biexciton binding energy is found to be 0.8 meV.