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Effects of Ga Supply on the Growth of (11‐22) AlN on m ‐Plane (10‐10) Sapphire Substrates
Author(s) -
Jo Masafumi,
Hirayama Hideki
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700418
Subject(s) - sapphire , materials science , surface roughness , optoelectronics , surface finish , plane (geometry) , composite material , optics , geometry , laser , physics , mathematics
Flat and high‐quality semipolar AlN layers are crucial to realizing polarization‐reduced deep‐UV optical devices. We investigate the effects of Ga supply during the growth of semipolar AlN on m ‐plane sapphire with the aim to produce better surface morphology. Incorporation of Ga into AlN is negligibly small at high‐temperature growth. The surface roughness significantly decreased with increasing the TMGa flow at a constant V/III ratio.