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Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN
Author(s) -
Kataoka Keita,
Narita Tetsuo,
Iguchi Hiroko,
Uesugi Tsutomu,
Kachi Tetsu
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700379
Subject(s) - cathodoluminescence , overlayer , materials science , annealing (glass) , ion , acceptor , analytical chemistry (journal) , exciton , ion implantation , non radiative recombination , vacancy defect , luminescence , photoluminescence , optoelectronics , chemistry , semiconductor , crystallography , metallurgy , physics , organic chemistry , chromatography , semiconductor materials , condensed matter physics , quantum mechanics
Thermal recovery of N‐polar GaN(000 1 ¯ ) samples implanted with magnesium and hydrogen ions was investigated by cathodoluminescence (CL) spectroscopy. The high thermal stability of N‐polar GaN allowed annealing process over 1200 °C without protective overlayer. The CL emissions from acceptor‐bound excitons and donor‐bound excitons were observed in the near‐band‐edge (NBE) after annealing over 1000 °C of the ion implanted samples, which indicates the formation of Mg acceptors. The emission intensities both in the NBE and in the green luminescence (GL) band increased with the annealing temperature, resulting from reducing the non‐radiative recombination centers. On the other hand, the enhancement of the GL band (nitrogen vacancy complexes) by prolonging the annealing duration above 1200 °C was not significant as compared to the band‐edge emission, probably resulting from the enhancement of activating the implanted Mg ions. These results give clear directions to improve the quality of Mg‐ion implanted GaN.