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Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition
Author(s) -
Kobayashi Atsushi,
Oseki Masaaki,
Ohta Jitsuo,
Fujioka Hiroshi
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700320
Subject(s) - materials science , yttria stabilized zirconia , sputtering , crystallinity , epitaxy , cubic zirconia , sputter deposition , optoelectronics , deposition (geology) , thin film , composite material , nanotechnology , layer (electronics) , ceramic , paleontology , sediment , biology
We grew thick InN films on yttria‐stabilized zirconia (YSZ) substrates by high‐growth‐rate pulsed sputtering deposition. X‐ray diffraction analysis revealed that the in‐plane orientation distribution of the InN (0001) films on YSZ decreased as the film thickness increased. The edge dislocation density of the 9.0‐µm‐thick InN film grown at a rate of 6 µm h −1 is calculated to be 1.7 × 10 9 cm −2 , and the atomically flat surface exhibited a step‐and‐terrace structure. In addition, the crystallinity of semipolar InN is improved by increasing the film thickness. These results indicate that high‐growth‐rate pulsed sputtering deposition can be used to prepare InN substrates for the fabrication of high‐speed electron devices and InGaN‐based, long‐wavelength light‐emitting devices.