Premium
Doping Mechanism of Ge 4+ Ions in Ge 4+ ‐Doped TiO 2
Author(s) -
Han Zhongxing,
Yu Yanlong,
Cao Yaan
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700289
Subject(s) - doping , x ray photoelectron spectroscopy , ion , materials science , raman spectroscopy , annealing (glass) , rutile , analytical chemistry (journal) , germanium , high resolution transmission electron microscopy , silicon , nanotechnology , chemistry , nuclear magnetic resonance , transmission electron microscopy , optics , physics , optoelectronics , organic chemistry , chromatography , metallurgy , composite material
A series of Ge 4+ ‐doped TiO 2 is synthesized by a sol–gel method and annealed at different temperatures. The doping mechanism of Ge was studied via XRD, Raman spectroscopy, XPS, and HRTEM techniques. The doping behavior of introduced Ge 4+ ions is related to the doping concentration and annealing temperature. It is revealed that the Ge 4+ ions would exist as doped Ge ions in substitutional mode and GeO 2 on surface. At certain concentration, the substitutional‐doped Ge ions are transferred to GeO 2 on surface with the increase of annealing temperature. The introduction of Ge 4+ ions inhibited the formation of the rutile phase of TiO 2 and delayed the phase transition.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom