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Doping Mechanism of Ge 4+ Ions in Ge 4+ ‐Doped TiO 2
Author(s) -
Han Zhongxing,
Yu Yanlong,
Cao Yaan
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700289
Subject(s) - doping , x ray photoelectron spectroscopy , ion , materials science , raman spectroscopy , annealing (glass) , rutile , analytical chemistry (journal) , germanium , high resolution transmission electron microscopy , silicon , nanotechnology , chemistry , nuclear magnetic resonance , transmission electron microscopy , optics , physics , optoelectronics , organic chemistry , chromatography , metallurgy , composite material
A series of Ge 4+ ‐doped TiO 2 is synthesized by a sol–gel method and annealed at different temperatures. The doping mechanism of Ge was studied via XRD, Raman spectroscopy, XPS, and HRTEM techniques. The doping behavior of introduced Ge 4+ ions is related to the doping concentration and annealing temperature. It is revealed that the Ge 4+ ions would exist as doped Ge ions in substitutional mode and GeO 2 on surface. At certain concentration, the substitutional‐doped Ge ions are transferred to GeO 2 on surface with the increase of annealing temperature. The introduction of Ge 4+ ions inhibited the formation of the rutile phase of TiO 2 and delayed the phase transition.