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Bi 2 Se 3 van der Waals Virtual Substrates for II–VI Heterostructures
Author(s) -
Garcia Thor Axtmann,
Deligiannakis Vasilios,
Forrester Candice,
Levy Ido,
Tamargo Maria C.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700275
Subject(s) - photoluminescence , substrate (aquarium) , heterojunction , materials science , van der waals force , sapphire , diffraction , thin film , electron diffraction , excited state , reflection high energy electron diffraction , cadmium telluride photovoltaics , epitaxy , optoelectronics , crystallography , chemistry , nanotechnology , optics , atomic physics , physics , molecule , laser , oceanography , organic chemistry , geology , layer (electronics)
We report on the growth and characterization of optical quality multiple quantum well structures of Zn x Cd 1− x Se/Zn x Cd y Mg 1− x − y Se on an ultra‐thin Bi 2 Se 3 /CdTe virtual substrate on c‐plane Al 2 O 3 (sapphire). Excellent quality highly oriented films grown along the (111) direction were achieved as evidenced by reflection high energy electron diffraction and X‐ray diffraction studies. We also observed room temperature and 77 K photoluminescence emission with peak energies at 77 K of 2.407 eV and linewidths of 56 meV comparable to those achieved on structures grown on InP. Exfoliation of the structures is also possible due to the van der Waals bonding of Bi 2 Se 3 . Exfoliated (substrate free) films exhibit photoluminescence emission nearly identical to that of the supported film. Additionally, contactless electroreflectance measurements show good agreement with simulations of the multiple quantum well structure as well as evidence of excited state levels. These results open new avenues of research for substrate independent epitaxy and the possibility of ultra‐thin electronics.