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Photoexcitation Carrier Kinetics in WSe 2 Nanolayers in the Vicinity of the Band Edge
Author(s) -
Shestakova Anastasia,
Lavrov Sergey,
Brekhov Kirill,
Ilyin Nikita,
Kudryavtsev Andrey,
Mishina Elena D.,
Kulyuk Leonid L.
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700259
Subject(s) - photoexcitation , excitation , materials science , relaxation (psychology) , enhanced data rates for gsm evolution , wavelength , amplitude , band gap , spectroscopy , optoelectronics , excitation wavelength , molecular physics , substrate (aquarium) , optics , condensed matter physics , chemistry , physics , telecommunications , psychology , social psychology , oceanography , quantum mechanics , computer science , geology
The photoexcitation and relaxation of carriers is studied in WSe 2 nanolayers on Si/SiO 2 substrate by optical pump–probe technique. The excitation wavelength falls in the vicinity of the band edge. The thickness variation of WSe 2 layers acts as tuning of band gap of the layers. In this way, a band edge spectroscopy is carried out using the constant excitation wavelength. It is shown that the relaxation time constants increase with the thickness increase, while the amplitude of transient reflectivity changes nonmonotonically. A model is suggested describing the amplitude behavior.