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Theoretical Investigations for Strain Relaxation and Growth Mode of InAs Thin Layers on GaAs(110)
Author(s) -
Ito Tomonori,
Akiyama Toru,
Nakamura Kohji
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700241
Subject(s) - materials science , dislocation , relaxation (psychology) , condensed matter physics , strain (injury) , layer (electronics) , strain energy , stress relaxation , ab initio , chemistry , nanotechnology , thermodynamics , composite material , physics , creep , medicine , psychology , social psychology , organic chemistry , finite element method
The growth mode of InAs/GaAs(110) is systematically investigated using our macroscopic theory with the aid of ab initio calculations that determine the parameter values used in the macroscopic theory. Formations of misfit dislocation and island are employed as strain relaxation mechanisms. The calculated results reveal that the misfit dislocation formation generally leads to two‐dimensional growth of InAs on GaAs(110) because of its small formation energy compared with that on GaAs(001). On the other hand, three‐dimensional growth mode appears with insertion of an In 0.25 Ga 0.75 As strain‐reducing layer between InAs and GaAs, since the strain relaxation induced by the insertion layer reduces the surface energy from 51 to 49 meV Å −2 that prefers the three‐dimensional island formation. These findings are consistent with experimental results.