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Epitaxial growth of semipolar InAlN films on yttria‐stabilized zirconia
Author(s) -
Oseki Masaaki,
Kobayashi Atsushi,
Ohta Jitsuo,
Oshima Masaharu,
Fujioka Hiroshi
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700211
Subject(s) - materials science , yttria stabilized zirconia , epitaxy , cubic zirconia , optoelectronics , layer (electronics) , photoluminescence , indium , sputtering , deposition (geology) , thin film , nanotechnology , metallurgy , ceramic , paleontology , sediment , biology
We report on the epitaxial growth of semipolar InAlN (11 ¯ 03) on yttria‐stabilized zirconia (YSZ) by pulsed sputtering deposition (PSD). Unlike the direct growth of InAlN on YSZ that resulted in c ‐plane InAlN, the insertion of an InN buffer layer favored the growth of InAlN in the semipolar direction. Phase separation of semipolar InAlN taking place in the films with intermediate indium contents can be suppressed by low‐temperature (less than 400 °C) PSD growth. These semipolar InAlN films grown at low temperatures possessed sufficient optical quality to demonstrate photoluminescence at room temperature.