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Aging Effect of the Resistive Switching in ZnO Thin Film
Author(s) -
Kambhala N.,
Angappane S.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700208
Subject(s) - materials science , electrode , thin film , substrate (aquarium) , resistive touchscreen , optoelectronics , resistive random access memory , switching time , voltage , nanotechnology , electrical engineering , chemistry , oceanography , engineering , geology
We have studied the stability of resistive switching behavior observed in RF sputtered ZnO thin film deposited on Pt/TiO 2 /SiO 2 /Si substrate with two different top electrodes, such as Ag and Al. Interestingly, there was no resistive switching behavior observed for freshly prepared devices. However, we have observed the switching behavior after few days. The switching voltage is found to be about 0.5 V. The resistive switching is found to appear due to the formation and rupture of conducting filaments made of the oxygen vacancies. Notably, the aging based resistive switching disappears after few days and shows a linear I–V curve, due to the increase of conducting filaments and the formation of conducting paths across the ZnO film.