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Photoluminescence characterization of Cu 2 GeS 3 bulk crystals
Author(s) -
Aihara Naoya,
Matsumoto Yusuke,
Tanaka Kunihiko
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700118
Subject(s) - exciton , photoluminescence , luminescence , spectroscopy , monoclinic crystal system , photoluminescence excitation , raman spectroscopy , materials science , crystal (programming language) , biexciton , phonon , acceptor , analytical chemistry (journal) , molecular physics , crystallography , chemistry , crystal structure , condensed matter physics , optoelectronics , optics , physics , programming language , chromatography , quantum mechanics , computer science
The optical properties of Cu 2 GeS 3 bulk crystals grown by chemical vapor transport were characterized using photoluminescence (PL) spectroscopy. PL spectra from the Cu 2 GeS 3 bulk crystals were analyzed as functions of excitation power and temperature. The crystal structure of the PL measurement samples was determined as monoclinic Cu 2 GeS 3 by Raman spectroscopy. The PL spectra contained two main bands of exciton (1.59 eV) and donor‐acceptor pair (DAP, 1.45–1.55 eV) recombination luminescence. In addition, phonon‐assisted transitions of bound excitons were observed on the DAP recombination luminescence. The exciton band was composed of free‐ and bound‐exciton luminescence. The thermal activation energy of the bound‐exciton luminescence was estimated to be about 9 meV. The activation energy of bound‐exciton luminescence was approximately identical to the peak energy difference of the free‐ and bound‐exciton luminescence.