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Optical characterization of Si‐doped metamorphic InGaAs with high indium content
Author(s) -
Chen Xingyou,
Gu Yi,
Zhang Yonggang,
Ma Yingjie,
Xi Suping,
Du Ben,
Di Zengfeng,
Ji Wanyan,
Shi Yanhui
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700094
Subject(s) - photoluminescence , doping , materials science , indium , blueshift , optoelectronics , laser linewidth , analytical chemistry (journal) , full width at half maximum , optics , chemistry , laser , physics , chromatography
The optical properties of Si‐doped metamorphic InGaAs layers with electron concentration in the range of 3 × 10 16 to 6 × 10 18 cm −3 are investigated in detail. The 10 K photoluminescence spectrum of lightly doped metamorphic In 0.81 Ga 0.19 As showed a narrow sharp peak at 546 meV with a full width at half maximum of 17.1 meV, comparable to that of InP‐lattice‐matched In 0.53 Ga 0.47 As, which is an evidence of the good crystalline quality. In the temperature range of 10–300 K, only band‐to‐band transition was observed in both lightly Si‐doped In 0.53 Ga 0.47 As and In 0.81 Ga 0.19 As, while the band‐to‐band emission was overlapped by multiple transitions in heavily Si‐doped In 0.81 Ga 0.19 As. A marked blueshift and significant increase in the linewidth of photoluminescence at high doping level were observed due to the enhanced band filling as well as many body effects in the heavily Si‐doped high indium content material. The alloy disorder, caused by heavy Si doping, seriously degrades the crystalline quality and immensely reduces the possibilities of radiative recombination in In 0.81 Ga 0.19 As.