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Topological electronic effects in exfoliated thin films of bismuth telluride
Author(s) -
Hermanowicz M.,
Radny M. W.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700086
Subject(s) - topological insulator , bismuth telluride , band gap , thin film , bismuth , materials science , electronic structure , surface states , electronic band structure , topology (electrical circuits) , density functional theory , optoelectronics , condensed matter physics , surface (topology) , nanotechnology , computational chemistry , chemistry , physics , geometry , composite material , thermoelectric materials , mathematics , thermal conductivity , combinatorics , metallurgy
An important aspect of band gap engineering in 2D thin films of topological insulators is determining their surface electronic properties at various atomic terminations. In this work, the electronic structure evolution of thin films of bismuth telluride ( Bi 2 Te 3 ) with varying surface termination is discussed based on density functional theory. The reported electronic effects include closure of the hybridization energy band gap and distinct spatial charge localization of topological surface states on two types of defected surfaces –Te and Bi‐terminated. The observed band gap value changes periodically every five monolayers following the quintuple‐based layered structure. The studied system shares, to a large extent, the main features with thin films of bismuth selenide ( Bi 2 Se 3 ), although with a stronger size effect.