Premium
Transport mechanisms in SnO 2 :N,H thin film grown by chemical vapor deposition
Author(s) -
Jiang Jie,
Ostheim Lars,
Hartung David,
Lu Yinmei,
Hofmann Detlev M.,
Eickhoff Martin,
Klar Peter J.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201700003
Subject(s) - chemical vapor deposition , thin film , dopant , analytical chemistry (journal) , hydrogen , materials science , nitrogen , electrical resistivity and conductivity , tin , atmospheric temperature range , deposition (geology) , inorganic chemistry , chemistry , nanotechnology , doping , optoelectronics , thermodynamics , metallurgy , paleontology , physics , organic chemistry , engineering , chromatography , sediment , biology , electrical engineering
Tin oxide thin films with nitrogen and hydrogen as dopants (SnO 2 :N,H) were prepared by chemical vapor deposition. To investigate the charge transport mechanisms in the samples the electrical conductivities were measured in the temperature range from 280 K down to 10 K and the mechanisms were analyzed. With decreasing temperature, the dominant electrical transport processes can be well described by the sequence of band conduction, D − state conduction and nearest‐neighbor‐hopping. We also studied the effect of different nitrogen and hydrogen concentrations, originating from a variation of the NH 3 flow rate in the growth process, on the charge transport mechanisms in the films.