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Review on carrier multiplication in graphene (Phys. Status Solidi B 12/2016)
Author(s) -
Malic Ermin,
Winzer Torben,
Wendler Florian,
Knorr Andreas
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201670576
Subject(s) - graphene , multiple exciton generation , charge carrier , condensed matter physics , scattering , materials science , physics , band gap , quantum mechanics
Graphene's exceptional gapless and linear electronic band structure close to the Dirac points gives rise to fascinating ultrafast phenomena, which are of great interest both for fundamental research as well as for technological applications. In particular, Auger scattering processes bridging the valence and the conduction band are very efficient in graphene. They change the charge carrier density and can give rise to a carrier multiplication (CM) that significantly increases the number of optically excited carriers. This is a promising many‐particle phenomenon for highly efficient graphene‐based photodetecting devices. In their Feature Article on pp. 2303–2310 , Malic et al. present a review of the recent research on carrier multiplication in graphene and Landau‐quantized graphene. The authors show theoretical predictions based on microscopic semiconductor Bloch equations and confront them with recent experimental pump‐probe and angle‐resolved photoemission measurements.