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Structure and composition of non‐polar (11‐20) InGaN nanorings grown by modified droplet epitaxy (Phys. Status Solidi B 5/2016)
Author(s) -
Springbett Helen,
Griffiths James,
Ren Christopher,
O'Hanlon Tom,
Barnard Jonathan,
Sahonta SumanLata,
Zhu Tongtong,
Oliver Rachel
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201670530
Subject(s) - epitaxy , transmission electron microscopy , materials science , polar , anisotropy , recrystallization (geology) , crystallography , quantum dot , chemical physics , optoelectronics , nanotechnology , chemistry , optics , layer (electronics) , physics , paleontology , astronomy , biology
Nitride‐based quantum dots (QDs) show promise as sources for single photon emission, enabling comparably high temperature emission and access to the blue and green spectral region. Some droplets forming during modified droplet epitaxy on non‐polar (11‐20) surfaces of InGaN epilayers on GaN are associated with underlying ring‐like structures. The work by Springbett et al. ( pp. 840–844 ) discusses droplet etching as a possible mechanism for ring formation, whereby In and Ga atoms are incorporated into the droplet and diffuse to the edges. Thereafter, recrystallization occurs, leading to the formation of a ring. It is hypothesised that the droplet then creeps in a direction determined by the crystallographic anisotropy and the surface energetics. Once this movement halts, etching continues. The resulting structure consists of a recession enclosed by a double ring. Transmission electron microscopy (TEM) analysis shows the droplets move along the ⟨0001⟩ c‐axis, and energy dispersive X‐ray spectroscopy (EDXS) indicates that they have a very high In content. These studies may help reveal the underlying QD formation mechanism during modified droplet epitaxy.