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Formation, dissociation, and diffusion of various hydrogen dimers in silicon
Author(s) -
Voronkov Vladimir V.,
Falster Robert
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600779
Subject(s) - thermal diffusivity , hydrogen , dissociation (chemistry) , dimer , silicon , diffusion , diatomic molecule , reaction rate constant , chemistry , equilibrium constant , oxygen , dissociation constant , analytical chemistry (journal) , materials science , thermodynamics , chemical physics , kinetics , molecule , organic chemistry , physics , biochemistry , receptor , quantum mechanics
Available data on hydrogen in silicon samples quenched from a high T and in those exposed to a plasma at low T are analyzed and the existence of three different forms of diatomic hydrogen is concluded. One of them, H 2A (a dimer of a moderate diffusivity) was fully characterized by the temperature dependence of its dissociation rate constant and its equilibrium constant and diffusivity. The two other forms, H 2B (of a high diffusivity) and H 2C (of a low diffusivity) are partially characterized. As a practical application of the properties of the dimers deduced here, the hydrogen content in solar cells was estimated from data on the permanent deactivation of boron–oxygen centers that degrade solar cell efficiency.