Premium
Measurement of the properties of GaN layers using terahertz time‐domain spectroscopic ellipsometry
Author(s) -
Tachi Kohei,
Asagami Shiho,
Fujii Takashi,
Araki Tsutomu,
Nanishi Yasushi,
Nagashima Takeshi,
Iwamoto Toshiyuki,
Sato Yukinori,
Morita Naotake,
Sugie Ryuichi,
Kamiyama Satoshi
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600767
Subject(s) - terahertz radiation , materials science , ellipsometry , optoelectronics , wafer , drude model , sapphire , epitaxy , time domain , terahertz time domain spectroscopy , layer (electronics) , optics , terahertz spectroscopy and technology , thin film , laser , physics , nanotechnology , computer science , computer vision
The electrical properties of an n‐type GaN wafer and epitaxial layer were evaluated using terahertz time‐domain spectroscopic ellipsometry (THz‐TDSE). The electrical properties, such as carrier density and mobility, were determined by fitting the reflective spectra of the sample using the Drude model. The measured properties of the GaN by THz‐TDSE are consistent with those obtained by conventional Hall methods. For the GaN epitaxial layer on sapphire substrates, the thickness was obtained by THz‐TDSE and compared with other measurements. THz‐TDSE has shown to be a suitable technique for evaluating the electrical properties of n‐type GaN materials non‐destructively and without contacts.