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Control of impurity concentration in N‐polar ( 000 1 ¯ ) GaN grown by metalorganic vapor phase epitaxy
Author(s) -
Tanikawa Tomoyuki,
Kuboya Shigeyuki,
Matsuoka Takashi
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600751
Subject(s) - metalorganic vapour phase epitaxy , impurity , epitaxy , analytical chemistry (journal) , oxygen , limiting oxygen concentration , materials science , carbon fibers , phase (matter) , nitride , chemistry , inorganic chemistry , layer (electronics) , nanotechnology , chromatography , organic chemistry , composite number , composite material
Unintentional impurity incorporation in N‐polar GaN films grown by metalorganic vapor phase epitaxy (MOVPE) was investigated. The influences of growth conditions on the impurity concentration, electrical properties, and optical properties were discussed. Secondary‐ion mass spectroscopy showed that both concentrations of carbon and oxygen were changed by growth conditions. With decreasing H 2 /(H 2 + N 2 ) ratio, the carbon concentration increased, while the oxygen concentration decreased. At higher V/III ratios, the oxygen concentration decreased. Nitrogen‐rich carrier gas and a high V/III ratio can decrease oxygen incorporation in the N‐polar GaN epitaxial layer. The growth parameters discussed in this study are concluded to affect the adsorption/desorption properties of impurities. Based on these results, the electrical properties of N‐polar III‐nitrides can also be controlled by choosing the appropriate MOVPE growth conditions. This technology will lead to improvements in N‐polar III‐nitride‐based device performance.