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Growth of 10 nm‐thick AlIn(Ga)N/GaN heterostructure with high electron mobility and low sheet resistance
Author(s) -
Kim JeongGil,
Im KiSik,
Won ChulHo,
Kang SeungHyeon,
Lee SangHeung,
Lim JongWon,
Kim Ji Heon,
Lee JungHee
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600731
Subject(s) - heterojunction , torr , materials science , electron mobility , optoelectronics , sheet resistance , analytical chemistry (journal) , chemistry , nanotechnology , layer (electronics) , physics , thermodynamics , chromatography
We have grown an AlIn(Ga)N/GaN heterostructure which is a promising alternative to the AlGaN/GaN heterostructure. The mobility and the carrier concentration of the two‐dimensional electron gas (2DEG) formed at the AlIn(Ga)N/GaN heterointerface were strongly dependent on both the growth temperature and pressure. Two optimized growth conditions for the heterostructure with a low sheet resistance less than 300 Ω/sq were obtained by varying the growth temperature and pressure from 750 to 1070 °C and 100 to 300 torr, respectively: (i) AlIn(Ga)N/GaN heterostructure with high 2DEG carrier concentration of 2.4 × 10 13 cm −2 with mobility of 1010 cm 2 V −1 s −1 (grown at 900 °C and 100 torr); (ii) AlIn(Ga)N/GaN heterostructure with high 2DEG mobility of 1910 cm 2 V −1 s −1 with carrier concentration of 1.13 × 10 13 cm −2 (grown at 900 °C and 300 torr). Both structures would be useful for different purpose of device application.