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Bandgap behavior of InGaN/GaN short period superlattices grown by metal‐organic vapor phase epitaxy
Author(s) -
Staszczak G.,
Gorczyca I.,
Grzanka E.,
SmalcKoziorowska J.,
Targowski G.,
Czernecki R.,
Siekacz M.,
Grzanka S.,
Skierbiszewski C.,
Schulz T.,
Christensen N. E.,
Suski T.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600710
Subject(s) - superlattice , materials science , indium , photoluminescence , molecular beam epitaxy , quantum well , optoelectronics , epitaxy , diffraction , band gap , transmission electron microscopy , indium nitride , optics , nanotechnology , gallium nitride , layer (electronics) , physics , laser
To obtain short period superlattices (SPLS) of In x Ga 1− x N/GaN in most cases molecular beam epitaxy has been applied. In this work the metal‐organic vapor phase epitaxy was used for obtaining similar structures and their quality as well as light emission features are studied. Thanks to control of growth parameters it was possible to fabricate In x Ga 1− x N/GaN SPSLs with structural quality of structures grown by MBE. They contain around 30% of indium in quantum wells (QWs) and different number m of atomic monolayers in QWs, and n . in the barriers. X‐ray diffraction and transmission electron microscope measurements have confirmed that the designed SPSLs structures were obtained. An agreement between the experimental results of photoluminescence measurements and theoretically predicted band gap behavior of SPSLs composed of m In x Ga 1− x N/ n GaN was achieved. Built‐in electric field in quantum wells and barriers of the selected structures were determined using a simplified method of calculation.