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100‐nm thick single‐phase wurtzite BAlN films with boron contents over 10%
Author(s) -
Li Xiaohang,
Wang Shuo,
Liu Hanxiao,
Ponce Fernando A.,
Detchprohm Theeradetch,
Dupuis Russell D.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600699
Subject(s) - wurtzite crystal structure , metalorganic vapour phase epitaxy , materials science , boron , epitaxy , phase (matter) , diffusion , crystallography , analytical chemistry (journal) , nanotechnology , chemistry , metallurgy , zinc , thermodynamics , physics , organic chemistry , layer (electronics) , chromatography
Growing thicker BAlN films while maintaining single‐phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm‐thick single‐phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow‐modulated epitaxy was employed to increase diffusion length of group‐III atoms and reduce parasitic reactions between the metalorganics and NH 3 . A large growth efficiency of ∼2000 μm mol −1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.