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Resistive switching in manganese oxide with nonlineardependence of the local resistivity on the oxygen‐vacancy concentration
Author(s) -
Boylo Irina V.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600698
Subject(s) - electrical resistivity and conductivity , resistive touchscreen , nonlinear system , oxygen , manganese oxide , manganese , materials science , condensed matter physics , vacancy defect , chemistry , physics , electrical engineering , metallurgy , engineering , organic chemistry , quantum mechanics
The present paper examines the influence of a nonlinear relationship between the local oxygen‐vacancy concentration and the local resistivity on resistive switching effects in complex oxides. The continuity equation has been used as a model for the motion of oxygen vacancies when a periodic time‐dependent electrical current is applied. The question of endurance of the switching cycles is discussed. It is found that nonlinearity of the resistivity–concentration dependence enhances the endurance.