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Reduction of interface state density at SiO 2 /InAlN interface by inserting ultrathin Al 2 O 3 and plasma oxide interlayers
Author(s) -
Akazawa Masamichi,
Seino Atsushi
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600691
Subject(s) - materials science , x ray photoelectron spectroscopy , oxide , plasma , chemical vapor deposition , analytical chemistry (journal) , deposition (geology) , layer (electronics) , optoelectronics , nanotechnology , chemical engineering , chemistry , metallurgy , paleontology , physics , chromatography , quantum mechanics , sediment , engineering , biology
SiO 2 /InAlN interfaces formed by plasma‐enhanced chemical vapor deposition were investigated. X‐ray photoelectron spectroscopy showed that the direct deposition of SiO 2 onto an InAlN surface led to the oxidation of the InAlN surface. The interface state density, D it , was on the order of 10 12 cm −2 eV −1 (5 × 10 12 cm −2 eV −1 at 0.3 eV from the conduction band edge, E c ), which indicated the possibility of improving the interface properties. Reduction of the interface state density was attempted using an Al 2 O 3 interlayer and a plasma oxide interlayer. The insertion of a 2‐nm‐thick Al 2 O 3 interlayer to prevent surface oxidation by plasma reduced D it slightly. A marked reduction in D it to less than 10 11 cm −2 eV −1 deeper than 0.3 eV from E c , however, was achieved by the intentional formation of a 1‐nm‐thick plasma oxide layer, formed by N 2 O plasma oxidation, as an interlayer between SiO 2 and InAlN.