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Interface characterization of atomic layer deposited Al 2 O 3 on m‐plane GaN
Author(s) -
Jia Ye,
Wallace Joshua S.,
Echeverria Elena,
Gardella Joseph A.,
Singisetti Uttam
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600681
Subject(s) - band bending , x ray photoelectron spectroscopy , materials science , band offset , atomic layer deposition , epitaxy , analytical chemistry (journal) , semiconductor , optoelectronics , fermi level , band gap , thin film , layer (electronics) , valence band , chemistry , nanotechnology , nuclear magnetic resonance , physics , chromatography , quantum mechanics , electron
The interfaces between dielectrics and semiconductors play a dominant role in the performance of both electronic and optoelectronic devices. In this article, we report the band offset characterization of atomic layer deposited Al 2 O 3 on non‐polar m‐plane ( 1 1 ¯ 00 ) GaN grown by hybrid vapor phase epitaxy using X‐ray photoelectron spectroscopy (XPS). The surface band bending of GaN was investigated by employing the angle resolved XPS (ARXPS). The Fermi level pinning is found to be at ∼2.4 eV above valence band maximum near the surface. The valence band offset and conduction band offset at the Al 2 O 3 and m‐plane GaN interface were determined to be 1.0 and 2.2 eV respectively. Electrical measurement was done by using metal–oxide–semiconductor capacitor. Capacitance–voltage hysteresis loop indicated low density of oxide traps. The frequency dependent C – V curves also showed a small dispersion.