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Photoluminescence properties of Er‐doped Ge–In(Ga)–S glasses modified by caesium halides
Author(s) -
Ivanova Zoya G.,
Zavadil Jiri,
Kostka Petr,
Djouama Torkia,
Reinfelde Mara
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600662
Subject(s) - photoluminescence , luminescence , caesium , doping , halide , band gap , analytical chemistry (journal) , materials science , ion , spectroscopy , chemistry , optoelectronics , inorganic chemistry , physics , organic chemistry , chromatography , quantum mechanics
Chalcohalide Ge–In–S and Ge–Ga–S glasses modified by CsX (X = Cl, Br, and I), and doped with Er in the range from 0.1 to 0.5 at.%, have been prepared and investigated. The influence of CsX addition on their optical properties has been studied by transmission and photoluminescence spectroscopy. Nominal compositions of [Ge 25 In(Ga) 10 S 65 ] 90 (CsX) 10 have been selected as host materials. The shift of the absorption edge as a function of caesium halides is observed in GeInS (CsX) system with maximum band gap observed for CsI. The low‐temperature photoluminescence reveals the broad band luminescence of the host glass centered at around the half of the band gap energy with superimposed 4 f –4 f radiative transitions of Er 3+ ions. The position of the broad luminescence band is considerably shifted to higher energy in the case of CsI as compared to CsCl and CsBr. In the case of Er‐doped chalcohalide (Ge 25 Ga 10 S 65 ) 90 (CsBr) 10 system, a considerable narrowing of 4 I 13/2 → 4 I 15/2 radiative transitions of Er 3+ ions accompanied by the pronounced splitting of the emission sub‐bands clearly documents the increasing ceramics‐like nature in the host material due to the admixture of CsBr. The influence of CsBr concentration on the shape of the broad‐band luminescence of Ge–Ga–S–CsBr host is also reported.