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The variation of electrical transport properties with thickness for ultrathin indium oxide films
Author(s) -
Jiang QingKun,
Yang Yang,
Zhang YuJie,
Liu XinDian,
Li ZhiQing
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600648
Subject(s) - variable range hopping , electrical resistivity and conductivity , materials science , condensed matter physics , atmospheric temperature range , indium , oxide , yttrium , metal , composite material , thermal conduction , optoelectronics , thermodynamics , metallurgy , physics , electrical engineering , engineering
We have systematically investigated the electrical transport properties of a series of In2 O3 films (with thickness t ranging from ∼ 4 to ∼ 45 nm) grown on yttrium stabilized ZrO2 single crystal substrates. Those t ≳ 11.5 nm films reveal metallic characteristics in electrical transport properties, and electron–electron interaction effects govern the low temperature behaviors of the resistivity. For the 6.3 and 3.7 nm thick films, the resistivities variation with temperature [ ρ ( T ) ] curves show insulator behaviors in the whole measured temperature range (2–300K). In addition, the two‐dimensional (2D) Mott type variable‐range‐hopping (VRH) dominates the temperature behavior of resistivity in the temperature range T cross ≲ T ≲ 80 K , and a crossover to the 2D Efros–Shklovskii (ES) VRH occurs below T cross . Our results are quantitatively consistent with the theoretical predications of the 2D Mott‐VRH and 2D ES‐VRH theories in the corresponding temperature regions.