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A deep‐level transient spectroscopy study of p‐type silicon Schottky barriers containing a Si–O superlattice
Author(s) -
Simoen Eddy,
Jayachandran Suseendran,
Delabie Annelies,
Caymax Matty,
Heyns Marc
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600593
Subject(s) - deep level transient spectroscopy , silicon , superlattice , materials science , schottky diode , epitaxy , stacking , schottky barrier , chemical vapor deposition , optoelectronics , valence (chemistry) , analytical chemistry (journal) , nanotechnology , chemistry , layer (electronics) , organic chemistry , diode , chromatography
The presence of deep levels in a silicon–oxygen (Si–O) superlattice (SL) deposited on p‐type silicon substrates has been investigated by deep‐level transient spectroscopy (DLTS) on thermally evaporated Cr Schottky barriers (SBs). The SLs have been fabricated with different thicknesses of the silicon interlayers, formed by chemical vapor deposition. It is shown that a broad band of hole traps is present near the surface of the SB, which is associated with the SL. In addition, the activation energy corresponding with the peak maximum shifts to higher values with respect to the valence band and gives rise to a higher trap concentration with increasing silicon interlayer thickness. It is proposed that these states are associated with the structural defects found in similar SL structures, that is, with the epitaxial quality and not with the SiO bonds in the atomic layers. The change in the DLT‐spectra with silicon thickness could be related with the transformation of the structural defects from small self‐interstitial clusters to stacking faults.