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Suppressing Ge diffusion by GaAsSb barriers in molecular beam epitaxy of InGaAs on Ge
Author(s) -
Hsueh WeiJen,
Chiu PeiChin,
Hong MingHwei,
Chyi JenInn
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600589
Subject(s) - molecular beam epitaxy , materials science , diffusion , layer (electronics) , germanium , optoelectronics , surface finish , epitaxy , nanotechnology , silicon , physics , composite material , thermodynamics
We have successfully mitigated the out‐diffusion of Ge during molecular beam epitaxy of InGaAs on Ge by using a GaAsSb barrier layer as evidenced by secondary ion mass spectroscopy. Compared to GaAs, this GaAsSb barrier layer also results in a smoother surface morphology with its root‐mean‐square roughness of 0.7 nm due to the surfactant effect of Sb. Using a step‐graded GaAsSb and AlGaAsSb metamorphic buffer layer, a 200‐nm p‐type In 0.53 Ga 0.47 As layer grown on Ge exhibits a hole mobility of 38 cm 2 V −1 s −1 with a hole concentration of 2.6 × 10 19 cm −3 at 300 K and 53 cm 2 V −1 s −1 with a hole concentration of 1.2 × 10 19 cm −3 at 77 K.