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Mapping of Au/a‐IGZO Schottky contacts by using scanning internal photoemission microscopy
Author(s) -
Shiojima Kenji,
Shingo Masato
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600587
Subject(s) - schottky barrier , photocurrent , schottky diode , materials science , optoelectronics , microscopy , optical microscope , semiconductor , amorphous solid , optics , scanning electron microscope , chemistry , crystallography , diode , physics , composite material
We have demonstrated scanning internal photoemission microscopy to characterize the degradation of Au/amorphous In–Ga–Zn–O Schottky contacts. After applying a reverse voltage stress of −30 V, the current–voltage characteristics became leaky and a local degradation of the contacts was clearly visualized in a photocurrent image, while no symptom of the degradation was observed in the optical microscope image. In addition, it was found that Schottky barrier height decreased by 0.1 eV in the degraded region. Thus, we conclude that this method gives quantitative and visual information on the underlying thin‐film transparency metal/semiconductor interfaces.