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Transformation of type‐II InAs/AlSb nanoscale heterostructure into type‐I structure and improving interband optical gain
Author(s) -
Alvi P. A.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600572
Subject(s) - heterojunction , optoelectronics , materials science , doping , semiconductor , electronic band structure , wavelength , condensed matter physics , physics
Most of the detailed studies have been directed toward III–V semiconductors based type‐I and type‐II heterostructures. But, the transformations between type‐I and type‐II heterostructures have not been well studied so far. In this paper, it is reported that the proper doping in a specific region of well known type‐II InAs/AlSb nanoscale heterostructure can transforms it into the type‐I heterostructure. Moreover, this doping also improves the interband optical gain of the transformed type‐I heterostructure as compared to the original type‐II structure. The eight band k · p model based self‐consistent calculations have been performed to calculate the band structure and the carrier's wavefunctions. On the basis of outcomes from the calculations, it is reported that the optimized interband optical gain (within TM mode) of the transformed heterostructure is almost ten times as compared to the other heterostructures operating in mid‐infrared (MIR) region. Thus, the transformed heterostructure may be an important heterostructure made of InAs/AlSb material system for MIR wavelength region. Hence, the proper doping can transform type‐II heterostructure made of an optically inactive material system into type‐I structure, a very efficient optically active heterostructure (referred to as gain structure), which can provide technologically important MIR wavelength range.