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On the origin of the ultraviolet photoluminescence in the Ce 3+ ‐doped epitaxial films of multicomponent (Lu,Gd) 3 (Ga,Al) 5 O 12 garnets
Author(s) -
Babin V.,
Chernenko K.,
Hanus M.,
Krasnikov A.,
Kučera M.,
Nikl M.,
Zazubovich S.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600570
Subject(s) - photoluminescence , doping , epitaxy , ultraviolet , materials science , crystallography , chemistry , nanotechnology , optoelectronics , layer (electronics)
The characteristics of a relatively weak ultraviolet photoluminescence of Ce 3+ ‐doped epitaxial films of the multicomponent Lu 3‐x Gd x Ga y Al 5‐y O 12 garnets ( x : 0.14–3; y : 0–3.54) are investigated by the steady‐state and time‐resolved spectroscopy methods in the 77–300 K temperature range. In the low‐temperature steady‐state emission spectrum, a complex emission band is observed with the maximum position depending on the sample and located in the 3.13–3.22 eV energy range. The excitation spectrum of this emission has the maxima around 3.95, 4.5, and 5.2 eV. The broad emission bands with the decay times of 1.25 and 6.76 ns, peaking at about 3.13 and 3.0 eV, respectively, and, in some samples, also the slow (≈1.39 ms) narrow Tb 3+ ‐related 3.23 eV emission band are found to contribute into the steady‐state emission spectrum. The fast ultraviolet emission is suggested to arise from two types of the antisiteC e A l 3 +‐related centers (the Ce 3+ ions substituting for the Al 3+ ions in the crystal lattice of (Lu,Gd) 3 (Ga,Al) 5 O 12 ).