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Electronic properties of MoS 2 nanoribbon with strain using tight‐binding method
Author(s) -
Chen ShuoFan,
Wu YuhRenn
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600565
Subject(s) - effective mass (spring–mass system) , tight binding , valence band , materials science , tensile strain , ultimate tensile strength , band gap , strain (injury) , condensed matter physics , enhanced data rates for gsm evolution , valence (chemistry) , electronic band structure , electronic structure , molecular physics , optoelectronics , composite material , chemistry , physics , classical mechanics , medicine , telecommunications , organic chemistry , computer science
The tight binding method was used to calculate the band structures of MoS 2 and its nanoribbon structures. We studied the influences of the quantum confinement effect and the strain effect to the band structure. The tensile strains were applied on both the confined and the transport directions of the nanoribbon. We found that the bandgap and the effective mass decrease with an increasing strain. In addition, the tensile strain along the transport direction has a better effect on reducing the hole effective mass. Although external strains can reduce the carrier effective mass, the valence band edge actually changes from the K valley to the Γ valley with a significantly larger effective mass. Sructure profile (real space and k‐space) and valence band maximum under different tensile strains.