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Heteroepitaxial growth of InGaSb on GaSb/Si(111)–√3 × √3‐Ga surface phase with a two‐step growth method to investigate the impact of high‐quality GaSb buffer layer
Author(s) -
MonzurUlAkhir Ahmed Ali Mohammad,
Mori Masayuki,
Maezawa Koichi
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600528
Subject(s) - reflection high energy electron diffraction , materials science , epitaxy , layer (electronics) , substrate (aquarium) , electron diffraction , scanning electron microscope , diffraction , buffer (optical fiber) , phase (matter) , analytical chemistry (journal) , optoelectronics , crystallography , nanotechnology , chemistry , optics , composite material , organic chemistry , chromatography , geology , telecommunications , computer science , oceanography , physics
An investigation was performed on the heteroepitaxial growth of In x Ga 1– x Sb on GaSb/Si(111)–√3 × √3‐Ga substrate following a two‐step growth method. The buffer layer flux ratio of Ga and Sb has been controlled precisely to grow a high‐quality GaSb layer without twins, whereas the ratio of In and Ga varied for epitaxial In x Ga 1– x Sb layers. The growth conditions during film deposition were kept the same for growth with and without a high‐quality buffer layer of GaSb. The ratio x ranges from 0.75 to 0.9 in steps of 0.05. To analyze and compare the growth, reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM) images, and X‐ray diffraction (XRD) have been performed and studied. It was found that the high‐quality (HQ) GaSb buffer layer is necessary to decrease twins in the growing InGaSb layer.