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Exciton self‐trapped on Si–Si dimers on the surface of silicon nanocrystal: Experimental evidence
Author(s) -
Andreev B. A.,
Yablonskiy A. N.,
Krasilnik Z. F.,
Ershov A. V.,
Grachev D. A.,
Gert A. V.,
Gusev O. B.,
Yassievich I. N.
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600525
Subject(s) - nanocrystal , exciton , photoluminescence , silicon , materials science , nanostructure , trapping , quantum dot , biexciton , nanotechnology , molecular physics , condensed matter physics , optoelectronics , chemistry , physics , ecology , biology
The intensive photoluminescence (PL) band corresponding to the self‐trapped excitons (STEs) at surface Si–Si dimers has been observed for the multilayer periodical nanostructures (SiO2 /nc‐Si/) with average nanocrystal size of 2.5 and 3.5 nm. The maximum of the band is located at 1.06 μ m (1.17 eV) and does not depend on the nanocrystal size. The decay times of the PL band are 5.9 and 5.3 ms for the nanocrystal size of 2.5 and 3.5 nm, correspondingly. The obtained experimental results give a direct evidence of the exciton self‐trapping on the silicon nanocrystals surface predicted by G. Allan, C. Delerue, and M. Lannoo [Phys. Rev. B 76 , 2961 (1996)].