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Material conversion of GaAs nanowires
Author(s) -
Nishioka Kohei,
Suzuki Hidetoshi,
Sakai Kentaro,
Ishikawa Fumitaro
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600522
Subject(s) - nanowire , indium , materials science , compound semiconductor , substrate (aquarium) , silicide , semiconductor , nanotechnology , optoelectronics , indium arsenide , diffusion , gallium arsenide , silicon , epitaxy , layer (electronics) , oceanography , geology , physics , thermodynamics
We investigate material conversion of compound semiconductor GaAs nanowires to extend their functions. By heating the GaAs nanowires in indium melt, the indium was introduced into the GaAs nanowire, converting the nanowires to be InGaAs compounds. The further heating treatment in N 2 ambient progresses the diffusion of Si element from the substrate, eventually forming the indium–silicide compound nanowires. The results suggest the conversion technique possibly extend the functions of the nanowire system by the exchange, introduction, or integrations of various materials.