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In situ X‐ray diffraction of GaAs/MnSb/Ga(In)As heterostructures
Author(s) -
Mousley P. J.,
Burrows C. W.,
Ashwin M. J.,
Takahasi M.,
Sasaki T.,
Bell G. R.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600503
Subject(s) - molecular beam epitaxy , diffraction , electron diffraction , heterojunction , epitaxy , materials science , synchrotron , reflection high energy electron diffraction , x ray crystallography , crystallography , in situ , relaxation (psychology) , optoelectronics , condensed matter physics , optics , chemistry , physics , nanotechnology , psychology , social psychology , layer (electronics) , organic chemistry
We have investigated the growth by molecular beam epitaxy (MBE) of GaAs on MnSb. MnSb epilayers on GaAs(111), GaAs(001) andIn 0.5Ga 0.5As ( 111 ) of thickness ∼ 50 nm were used as substrates for GaAs films. The MBE growth of GaAs was monitored in situ using synchrotron X‐ray diffraction and reflection high energy electron diffraction. We show data on strain relaxation and growth mode, and discuss the epitaxial relationship between GaAs(001) and MnSb(1 1 ‾ 01). Schematic of the molecular beam epitaxy/X‐ray diffraction in situ experiment and typical 2D detector data, with GaAs(111) and MnSb(0001) diffraction features.