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Anisotropic nature of hole g‐factor in individual InAs quantum rings
Author(s) -
Kaji R.,
Tominaga T.,
Wu Y.N.,
Wu M.F.,
Cheng S.J.,
Adachi S.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600486
Subject(s) - spins , anisotropy , condensed matter physics , isotropy , wave function , electron , physics , valence (chemistry) , quantum well , semiconductor , valence electron , materials science , optics , quantum mechanics , laser
The in‐plane g‐factors of electron and hole spins ( g ⊥ e , g ⊥ h ) confined in the individual InAs/GaAs quantum rings (QRs) were investigated by using experimental and theoretical approaches. From the measurements, we found that the experimentally obtained | g ⊥ h | varies largely from QR to QR, while the variation in | g ⊥ e | is small. In addition, the in‐plane ( x − y ) and the out‐of‐plane ( x − z ) anisotropies in hole g‐factor were obviously confirmed while the electron g‐factor exhibits isotropic natures in both cases. From the model calculations, the effects of the shape anisotropies and the uniaxial stress were examined. The shape anisotropy in QRs modifies the spatial distributions of hole wavefunctions. Thus, it brings the resultant changes in the degree of valence‐band mixing and | g ⊥ h | , and combined with uniaxial stress, a larger modulation in | g ⊥ h | was achieved. Although more detailed discussions are necessary at this stage, our findings will give valuable information for the g‐factor control in semiconductor nanostructures.