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Background impurities in Si 0.8 Ge 0.2 /Si/Si 0.8 Ge 0.2 n‐type δ‐doped QW
Author(s) -
Tulupenko V.,
Duque C. A.,
Morales A. L.,
Tiutiunnyk A.,
Demediuk R.,
Dmytrychenko T.,
Fomina O.,
Akimov V.,
Restrepo R. L.,
MoraRamos M. E.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600464
Subject(s) - impurity , doping , ionization , quantum well , condensed matter physics , quantum dot , ionization energy , atomic physics , materials science , physics , ion , nanotechnology , optics , quantum mechanics , laser
Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V‐shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space‐quantized energy levels for an edge‐doped quantum well.