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Investigation of visible‐light absorption in Cu 2 O/TiO 2 heterojunctions with an interstitial at the interface
Author(s) -
Li Lei,
Li Wenshi,
Yang Jianfeng,
Mao LingFeng
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600420
Subject(s) - heterojunction , delocalized electron , absorption (acoustics) , materials science , doping , visible spectrum , atom (system on chip) , ion , electron , interstitial defect , absorption spectroscopy , photochemistry , analytical chemistry (journal) , optoelectronics , chemistry , optics , physics , organic chemistry , quantum mechanics , computer science , composite material , embedded system , chromatography
The effect of Cu/O/Ti interstitials on the visible‐light absorption in Cu 2 O/TiO 2 heterojunctions has been investigated by ab initio methods. The three interstitials are, respectively, doped at the interface of the Cu 2 O/TiO 2 heterojunctions. The Ti interstitial efficiently improves the visible‐light absorption, whereas the O interstitial reduces the visible‐light absorption. An independent characteristic of the visible‐light absorption is found for doping with the Cu interstitial. These phenomena originate from the different concentrations of delocalized electrons induced by the doping atom. The doping with Ti atoms could induce the aggregation of Cu ions, which release more delocalized electrons and so improve the visible‐light absorption in a Cu 2 O/TiO 2 heterojunction.