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Nonlinear behavior of the emission in the periodic structure of InAs monolayers embedded in a GaAs matrix
Author(s) -
Pozina Galia,
Kaliteevski Mikhail A.,
Nikitina Ekaterina V.,
Denisov Dmitrii V.,
Polyakov Nikolai K.,
Pirogov Evgenii V.,
Goray Leonid I.,
Gubaydullin Azat R.,
Ivanov Konstantin A.,
Kaliteevskaya Natalia A.,
Egorov Anton Yu.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600402
Subject(s) - photoluminescence , quantum well , monolayer , exciton , excited state , spontaneous emission , materials science , optoelectronics , relaxation (psychology) , stimulated emission , laser , condensed matter physics , molecular physics , atomic physics , physics , optics , nanotechnology , psychology , social psychology
We report time‐resolved photoluminescence (TRPL) measurements performed at different temperatures for the Bragg structure containing 60 InAs monolayer‐based quantum wells (QWs) periodically arranged in a GaAs matrix. TRPL data reveal an appearance of the additional superradiant (SR) mode originated from coherent collective interaction of QWs. The SR mode is not manifested in the case if a small number of QWs is excited, then only an exciton emission related to the InAs QWs dominates the PL spectrum. The SR mode demonstrates a superlinear dependence of the intensity and radiative decay rate on the excitation power and its intensity increases at elevated temperatures compared to the excitonic emission. The photoluminescence delay time is much shorter for the SR mode indicating that the relaxation of hot excitons can occur via stimulated scattering processes. The specific behavior of the SR emission can have a strong potential for different applications such as optical logic devices, superluminescent diodes, optical switches, and low‐threshold lasers. Time‐resolved photoluminescence image at low temperature for the Bragg structure consisting of InAs monolayer‐based quantum wells (inset).