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The influence of the quantum‐confined Stark effect on InGaN/AlGaN quantum dots
Author(s) -
Zakizade E.,
Figge S.,
Laurus C.,
Mehrtens T.,
Rosenauer A.,
Hommel D.,
Gutowski J.,
Sebald K.
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600325
Subject(s) - quantum dot , quantum confined stark effect , photoluminescence , stark effect , exciton , electric field , condensed matter physics , electro absorption modulator , blueshift , biexciton , quantum well , materials science , field (mathematics) , intensity (physics) , optoelectronics , physics , quantum dot laser , semiconductor , optics , quantum mechanics , laser , semiconductor laser theory , mathematics , pure mathematics
We report on micro‐photoluminescence studies on InGaN/ AlGaN quantum dots grown by metal‐organic vapor phase epitaxy. The excitonic emission lines can be observed up to 100 K. Investigations of the quantum‐confined Stark effect in dependence on an external electric field show a partial compensation of internal fields and an enhancement of the overlap between electron and hole wave function in the quantum dots. As a consequence, an increase of the PL intensity and a blue shift of the single‐quantum‐dot emission line is observed. Furthermore, we show how the internal electric field strongly affects the photoluminescence intensity of the emission line up to 40 K. In addition, by investigating the excitonic and biexcitonic states, we demonstrate that the partial compensation of the internal field increases the biexciton binding energy and influences the intensity of its emission.