Premium
Selective growth of ZnTe on sapphire substrates using a SiO 2 mask
Author(s) -
Nakasu Taizo,
Hattori Shota,
Sun WeiChe,
Kobayashi Masakazu
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600317
Subject(s) - sapphire , molecular beam epitaxy , materials science , heterojunction , optoelectronics , flux (metallurgy) , growth rate , epitaxy , desorption , selectivity , analytical chemistry (journal) , optics , chemistry , nanotechnology , adsorption , layer (electronics) , metallurgy , laser , biochemistry , physics , geometry , mathematics , chromatography , catalysis
ZnTe/sapphire heterostructures have attracted attention for their suitable properties as a terahertz wave detector material. In this study, we focused on the selective growth of ZnTe on SiO 2 ‐masked sapphire substrates by molecular beam epitaxy (MBE). When ZnTe was grown at a high temperature (=350 °C), low growth rate (≦ 0.3 μm h −1 ), and low J Te / J Zn flux ratio (≦ 0.83) compared with the conventional film growth conditions, the formation of ZnTe nuclei on the SiO 2 mask was avoided. The Te flux intensity significantly affected the selectivity of ZnTe growth. The selective growth of ZnTe on sapphire was revealed to be limited by the desorption of Te adatoms from the SiO 2 .