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Full tensor properties of single‐domain tetragonal 0.63Pb(Mg 1/3 Nb 2/3 )O 3 –0.37PbTiO 3 single crystal and their orientation dependence
Author(s) -
Jing Yujia,
Zheng Limei,
Lü Weiming,
Xi Zengzhe,
Zheng Peng,
Du Juan,
Zhang Rui
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600251
Subject(s) - piezoelectricity , materials science , tetragonal crystal system , single crystal , poling , dielectric , ferroelectricity , condensed matter physics , anisotropy , permittivity , single domain , nuclear magnetic resonance , crystallography , optics , crystal structure , composite material , optoelectronics , magnetic domain , physics , magnetization , chemistry , quantum mechanics , magnetic field
Single‐domain states have been achieved in [001] C ‐poled tetragonal 0.63Pb(Mg 1/3 Nb 2/3 )O 3 –0.37PbTiO 3 single crystal by a room‐temperature poling process. A comprehensive study of ferroelectric, piezoelectric, dielectric, and elastic properties of single‐domain crystal has been performed. High thickness shear piezoelectricity ( d 15 = 1410 pC/N) and transverse dielectric permittivity ( ϵ 11 T = 12250 ) is shown, and high anisotropy is exhibited according to the low longitudinal piezoelectric and dielectric parameters ( d 33 = 307 pC/N,ϵ 33 T = 775 ). The orientation dependence of longitudinal dielectric permittivity, piezoelectric constant, electromechanical coupling factor, and elastic compliance constants were calculated based on the single‐domain complete set. The maximum value ofd 33*was found 49° away from [001] C . Compared with domain‐engineered crystals, the single‐domain crystal possesses much higher shear piezoelectric and electromechanical properties, which show potential applications in shear‐wave transducers. This study provides important information of tetragonal Pb‐based relaxor single crystal, which is urgently needed for theoretical studies and device designs.