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Electronic transport in p‐type Mg‐doped GaAs nanowires
Author(s) -
Cifuentes N.,
Limborço H.,
Viana E. R.,
Roa D. B.,
Abelenda A.,
da Silva M. I. N.,
Moreira M. V. B.,
Ribeiro G. M.,
de Oliveira A. G.,
González J. C.
Publication year - 2016
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201600204
Subject(s) - nanowire , variable range hopping , dopant , doping , materials science , thermal conduction , electrical resistivity and conductivity , condensed matter physics , field effect transistor , optoelectronics , transistor , electrical engineering , physics , voltage , composite material , engineering
The electronic transport properties of several Mg‐doped GaAs nanowires are investigated. It is shown that Mg can be successfully used as a nontoxic and noncarcinogenic p‐type dopant in GaAs nanowires. The doping levels, expanding over two orders of magnitude, and free holes mobility in the NW were obtained by the analysis of field effect transistors transfer curves. The study of the temperature dependence of the electrical resistivity of the nanowires shows that electronic transport changes from conduction of free holes, above room temperature, to variable hopping conduction at lower temperatures. Both, Mott and Efros‐Shklovskii variable range hopping mechanism were clearly identified in the nanowires.